Self-aligned access regions for indium gallium arsenide (In 0.53Ga0.47As) n-type metal-oxide-semiconductor field effect transistors suitable for an extremely-thin III-V-on-insulator approach are investigated. Highly doped n+ source/drain regions are selectively grown by metal-organic vapor phase epitaxy and self-aligned Nickel-InGaAs alloyed metal contacts are obtained using a self-aligned silicide-like process, where different process conditions have been studied. Soft pre-epitaxy cleaning is followed by X-ray photoelectron spectroscopy. Relevant contact and sheet resistances are measured and integration issues are highlighted. © 2011 IEEE.