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Selective Studies of Chemical Vapor-Deposited Aluminum Nitride-Silicon Nitride Mixture Films

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Abstract

Films of aluminum nitride and mixtures of aluminum nitride and silicon nitride have been chemically vapor deposited upon silicon and sapphire substrates within the temperature range of 600°-1100°C by the ammonolysis of gaseous aluminum trichloride and silane. Characterization of film properties included; film morphology as observed by transmission electron microscopy (TEM), optical properties, dissolution rate, residual stresses, electrical conduction, and charge-storage behavior, as a function of composition and deposition parameters. Some compositions appeared promising for programmable read only memory applications (MIOS-FET) based upon low write-erase voltages, good fatigue, and charge retention properties. © 1978, The Electrochemical Society, Inc. All rights reserved.

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JES

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