Schottky barriers of scandium and scandium monosilicide on silicon

Abstract

The Schottky barrier heights of scandium deposited on n- and p-type silicon have been measured by the capacitance versus voltage technique. Respective values of about 0.4 and 0.7 eV were determined; they do not change upon the formation of the monosilicide, ScSi, after annealing at 500°C. These results are similar to those obtained with yttrium and the rare-earth metals, in agreement with the respective positions of these elements in the Periodic Table: same column, but fourth, fifth and sixth periods, respectively. © 1991.