Carbon nanotube field-effect transistors and logic circuits
R. Martel, V. Derycke, et al.
DAC 2002
We present a scheme for the fabrication of ultrashort channel length metal-oxide-semiconductor field-effect transistors (MOSFETs) involving nanolithography and molecular-beam epitaxy. The active channel is undoped and is defined by a combination of nanometer-scale patterning and anisotropic etching of an n++ layer grown on a silicon on insulator wafer. The method is self-limiting and can produce MOSFET devices with channel lengths of less than 10 nm. Measurements on the first batch of n-MOSFET devices fabricated with this approach show very good output characteristics and good control of short-channel effects. © 2000 American Institute of Physics.
R. Martel, V. Derycke, et al.
DAC 2002
Wilfried Haensch, Edward J. Nowak, et al.
IBM J. Res. Dev
S.J. Wind, J. Appenzeller, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
S.J. Wind, J. Appenzeller, et al.
Applied Physics Letters