Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors

Abstract

CNFETs were fabricated in a top gate construction. The thin dielectric offered improved electrical performance relative to substrate-gated CNFETs with thicker gate dielectrics, at a fraction of the gate voltage. The top gate structure also offered individual switchability, as well as stable n-FET and p-FET devices, enabling the possibility of future CMOS CNFET circuits.