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Solid State Communications
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Raman scattering in the depletion region of GaAs

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Abstract

We have obtained spectra for the LO phonon mode by Raman scattering associated with surface quantization of the hole states in the depletion layer of highly doped n-type GaAs samples. When semi-transparent metal contacts are employed, the zone-center LO peak shifts to higher frequency due to plasmon-phonon interaction. The observed effects are not sensitive to the types of metal. The presence of the plasmon mode is thought to be due to the steady-state carrier injection from the incident laser light. The position of the peak is used to estimate the surface recombination rate of the excited electron-hole pairs. © 1974.

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Solid State Communications

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