A photomask design flow for generating guiding patterns used in graphoepitaxial DSA processes is proposed and tested. In this flow, a new fast DSA model is employed for DSA structure verification. The execution speed and accuracy of the fast model were benchmarked with our previously reported Monte Carlo method. We demonstrated the process window verification using the OPC/DSA flow with the fast DSA model and compared this with experimental results in the guiding patterns simulated by e-beam lithography. © 2012 Copyright SPIE.