About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
SPIE Advanced Lithography 2017
Conference paper
Printability and actinic AIMS review of programmed mask blank defects
Abstract
We report on the printability, mitigation and actinic mask level review of programmed substrate blank pit and bump defects in a EUV lithography test mask. We show the wafer printing behavior of these defects exposed with an NXE:3300 EUV lithography scanner and the corresponding mask level actinic review using the AIMS™ tool. We will show which categories of these blank substrate defects print on wafer and how they can be mitigated by hiding these defects under absorber lines. Furthermore we show that actinic AIMS™ mask review images of these defects, in combination with a simple thresholded resist transfer model, can accurately predict their wafer printing profiles. We also compare mask level actinic AIMS™ to top down mask SEM review in their ability to detect these defects.