PaperElectronic structure and luminescence processes in In1-xGa xP alloysA.A. Onton, M.R. Lorenz, et al.Journal of Applied Physics
PaperIntra- and interband free-carrier absorption and the fundamental absorption edge in n-type InPW.P. Dumke, M.R. Lorenz, et al.Physical Review B
PaperElectroluminescence from Ge-doped GaP p - N junctionsK.K. Shih, G.D. Pettit, et al.Journal of Applied Physics