Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
The fundamental absorption edge of AlAs and AlP was investigated by optical transmission measurements from 2° to 300°K. The absorption edge in both materials is dominated by indirect optical transitions, and values of Eg at 300°K are 2.45 eV for AlP and 2.16 eV for AlAs. The bandgaps at 0° are 2.52 eV and 2.238 eV respectively. The absorption edge structure in AlAs is consistent with the conduction band minima at or near X. It includes impurity-induced bound and free exciton components and phonon-assisted components. The corresponding phonon energies of 13(TA), 27(LA) 42(TO) and 50 meV (LO) have been identified in AlAs. © 1970.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry