Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Porous organosilicates low-dielectric films for high-frequency devices
Abstract
The dielectric properties are reported for nanoporous thin films of poly(methyl silsesquioxane) (MSSQ) for use as an ultralow, dielectric intermetal insulator. Direct experimental conformation is provided that the films have low dielectric constants with low loss up to 10 GHz. Low-frequency measurements are also reported.