Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Next generation graphene-based electronics essentially need a dielectric layer with several requirements such as high flexibility, high transparency, and low process temperature. Here, we propose and investigate a flexible and transparent poly-4-vinylphenol and poly(melamine-co-formaldehyde) (PVP/PMF) insulating layer to achieve intrinsic graphene and an excellent gate dielectric layer at sub 200°C. Chemical and electrical effects of PVP/PMF layer on graphene as well as its dielectric property are systematically investigated through various measurements by adjusting the ratio of PVP to PMF and annealing temperature. The optimized PVP/PMF insulating layer not only removes the native -OH functional groups which work as electron-withdrawing agents on graphene (Dirac point close to zero) but also shows an excellent dielectric property (low hysteresis voltage). Finally, a flexible, wearable, and transparent (95.8%) graphene transistor with Dirac point close to zero is demonstrated on polyethylene terephthalate (PET) substrate by exploiting PVP/PMF layer which can be scaled down to 20 nm. This journal is © the Partner Organisations 2014.
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
R.W. Gammon, E. Courtens, et al.
Physical Review B
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures