F.A. Geenen, W. Knaepen, et al.
Thin Solid Films
The solid-state reaction and agglomeration of thin nickel-silicide films was investigated from sputter deposited nickel films (1-10 nm) on silicon-on-insulator (100) substrates. For typical anneals at a ramp rate of 3 °C/s, 5-10 nm Ni films react with silicon and form NiSi, which agglomerates at 550-650 °C, whereas films with a thickness of 3.7 nm of less were found to form an epitaxylike nickel-silicide layer. The resulting films show an increased thermal stability with a low electrical resistivity up to 800 °C. © 2010 American Institute of Physics.
F.A. Geenen, W. Knaepen, et al.
Thin Solid Films
K. De Keyser, B. De Schutter, et al.
Microelectronic Engineering
K. Opsomer, D. Deduytsche, et al.
Applied Physics Letters
W.P. Leroy, C. Detavernier, et al.
Journal of Applied Physics