Publication
IRPS 2015
Conference paper

Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications

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Abstract

We explore the use of oxygen vacancies for nonvolatile data storage by trapping electrons in the high-k, gate dielectric layer of NFETs. Programming is performed via channel carrier injection and is erased by tunneling. 64Kb arrays were constructed and reliability is demonstrated.

Date

26 May 2015

Publication

IRPS 2015

Authors

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