IEDM 1993
Conference paper

High Performance 0.1 μm CMOS Devices with 1.5 V Power Supply


This paper presents the design, fabrication, and characterization of high-performance 0.lμm-channel CMOS devices with dual n+/p+ polysilicon gates on 3SA-thick gate oxide. A 22ps/stage CMOS-inverter delay is obtained at a power supply voltage of 1.5V. The highest unity-current-gain frequencies (fT) measured are 118 GHz for nMOSFET, and 67 GHz for pMOSFET.