IRPS 2015
Conference paper

SOI FinFET soft error upset susceptibility and analysis

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Measurements of the soft error upset cross section for SOI FinFET SRAMs are compared to earlier generation PDSOI SRAMs, with the FinFET circuit showing 2-3 orders of magnitude lower soft error susceptibility. This improvement is shown by simulations to be due to the better electrostatic control of the channel in the FinFET.