Publication
IRPS 2015
Conference paper

SOI FinFET soft error upset susceptibility and analysis

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Abstract

Measurements of the soft error upset cross section for SOI FinFET SRAMs are compared to earlier generation PDSOI SRAMs, with the FinFET circuit showing 2-3 orders of magnitude lower soft error susceptibility. This improvement is shown by simulations to be due to the better electrostatic control of the channel in the FinFET.

Date

26 May 2015

Publication

IRPS 2015

Authors

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