Overcoming the challenges of 22-nm node patterning through litho-design co-optimization

Abstract

Historically, lithographic scaling was driven by both improvements in wavelength and numerical aperture. Recently, the semiconductor industry completed the transition to 1.35 NA immersion lithography. The industry is now focusing on double patterning techniques (DPT) as a means to circumvent the limitations of Rayleigh diffraction. Here, the IBM Alliance demonstrates the extendibility of several double patterning solutions that enable scaling of logic constructs by decoupling the pattern spatially through mask design or temporally through innovative processes. This paper details a set of solutions that have enabled early 22 nm learning through careful lithography-design optimization. ©2009 SPIE.