Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
The optical and electrical properties of undoped HOMOCVD a-Si films are strikingly similar to those of GD films obtained over the same substrate temperature range. The contact properties studies reveled that the metals with θm ≤ 4.3 eV form a Schottky diode while those with θm ≤ 4.3 eV form a quasi- or ohmic low resistance contact to undoped HOMOCVD a-Si films without a heavily doped layer at the interface. © 1985.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT