Publication
Physical Review B
Paper

Observation by resonant tunneling of high-energy states in GaAs-Ga1-xAlxAs quantum wells

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Abstract

The current-voltage characteristics of Ga1-xAlxAs-GaAs-Ga1-xAlx As double-barrier devices show, in addition to resonant tunneling via quasibound states, well-defined structures corresponding to energies higher than the barrier height. These new features are interpreted as resonant tunneling through confined states in Ga1-xAlxAs, at the X point of the Brillouin zone. © 1986 The American Physical Society.

Date

15 May 1986

Publication

Physical Review B