Thin Solid Films

Narrow band gap base heterojunction bipolar transistors using SiGe alloys

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Novel low temperature epitaxial growth techniques such as molecular beam epitaxy and low temperature chemical vapor deposition permit the use of pseudomorphic Si1-xGex alloys in silicon technology. The smaller band gap of these alloys allows for a variety of novel band-engineered structures that promise to enhance silicon-based technology significantly. In this brief review, we discuss the growth and properties of pseudomorphic Si1-xGex structures ands then focus on their applications, especially the Si1-xGex base heterojunction bipolar transistor. © 1990.