Publication
GFP 2017
Conference paper

Monolithic integration of InAlAs/InGaAs quantum-well on InP-OI micro-substrates on Si for infrared light sources

View publication

Abstract

We demonstrate for the first time that InAlAs/InGaAs QW can be selectively grown on micron-sized InP-OI substrates, obtained by selective epitaxy in empty oxide cavities on Si. The concept, material and optical characterizations are presented, paving the way towards integrated light sources for infrared applications.

Date

24 Oct 2017

Publication

GFP 2017

Authors

Share