Local integration of III-V active photonic material on silicon is highly desirable for the dense cointegration of electronics and photonics. In this work, we integrate GaAs and InP microdisk lasers on silicon using template-Assisted selective epitaxy (TASE). We demonstrate optically pumped room-Temperature lasing from InP hexagonal microdisks integrated via TASE and evaluate their performance at lower temperatures.In order to assess and evaluate the viability of TASE, performance of InP hexagonal microdisks are compared to identical devices fabricated via the highly developed and mature direct wafer bonding technique. The lasing threshold as well as the light-in light-out curves of our TASE structures compare favorably with the bonded InP hexagonal microdisks. This demonstrates that our TASE approach is a promising technique for the monolithic integration of optical devices on Si.