About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
VLSI Technology 1990
Conference paper
Mobile ion gettering in passivated P+ polysilicon gates
Abstract
Mobile ion contamination in the deep-submicron regime was studied for boron, arsenic, and phosphorus-doped polysilicon gates. An effective gettering process is presented for the passivation of p+ polysilicon gates without boron penetration through thin gate oxide. The issue of mobile ion gettering with p+ polysilicon in deep-submicron CMOS technology is also studied. A channel-length-dependent mobile ion instability was observed for the first time. A gettering/passivation process using polysilicon gates (PSG/LTO) with proper activation anneals was found to be effective for p+ polysilicon gated devices without causing boron penetration through the gate oxide. © 1990 IEEE.