Abstract
Very high transconductance 0.1 μ m surface-channel pMOSFET devices are fabricated with p+-poly gate on 35 AA-thick gate oxide. A 600AA-deep p+ source-drain extension is used with self-aligned TiSi2 to achieve low device series resistance. The maximum saturation transconductances, 400 mS/mm at 300K and 500 mS/mm at 80K, are the highest reported to date for pMOSFET devices.