B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
A variable-energy positron beam was used to study device-quality SiO2 (50-nm thick) grown thermally on the Si(100) surface. The unusual observation of ortho-positronium 3 decay at the interface demonstrates that microvoids >1 nm in size are present, most likely as a consequence of the thermal oxidation process. Other interfacial defects were also observed, illustrating the sensitivity of positron studies for studying interfacial properties. © 1989 The American Physical Society.
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids