Hiroshi Ito, Reinhold Schwalm
JES
A variable-energy positron beam was used to study device-quality SiO2 (50-nm thick) grown thermally on the Si(100) surface. The unusual observation of ortho-positronium 3 decay at the interface demonstrates that microvoids >1 nm in size are present, most likely as a consequence of the thermal oxidation process. Other interfacial defects were also observed, illustrating the sensitivity of positron studies for studying interfacial properties. © 1989 The American Physical Society.
Hiroshi Ito, Reinhold Schwalm
JES
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.