P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A variable-energy positron beam was used to study device-quality SiO2 (50-nm thick) grown thermally on the Si(100) surface. The unusual observation of ortho-positronium 3 decay at the interface demonstrates that microvoids >1 nm in size are present, most likely as a consequence of the thermal oxidation process. Other interfacial defects were also observed, illustrating the sensitivity of positron studies for studying interfacial properties. © 1989 The American Physical Society.
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R. Ghez, M.B. Small
JES
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry