Electromigration characteristics of power grid like structures
Baozhen Li, Andrew Kim, et al.
IRPS 2018
Modulation of Cu interconnect microstructure in a low-k dielectric was achieved at an elevated anneal temperature of 250 ̂C}. In contrast to the unpassivated conventional structure, a TaN metal passivation layer was deposited on the plated Cu overburden surface before annealing at the elevated temperature to prevent stress migration reliability degradation. As compared with the conventional structure annealed at 100 ̂ C , the elevated annealing process enabled further Cu grain growth, which then resulted in an increased Cu grain size and improved electromigration resistance in the interconnects. © 2014 IEEE.
Baozhen Li, Andrew Kim, et al.
IRPS 2018
Chih-Chao Yang, Terry A. Spooner, et al.
IITC 2017
Ernest Y. Wu, James Stathis, et al.
IRPS 2016
H. Huang, Nicholas A. Lanzillo, et al.
IITC 2018