Material and process improvements towards sub 36nm pitch EUV single exposure

Abstract

With the insertion of EUV lithography into high volume manufacturing, mature lithographic materials and processes are required on multiple fronts. Not only do lithographic materials require optimization to reduce stochastic effects; processing techniques, underlying films, and auxiliary processes such as rinse are also known to have important impacts on the ability to yield sub-36nm pitch devices. In this paper we will describe the contribution that resist maturity, improved underlayers, rinse materials, and process parameters such as develop optimization and improved hardware have on yield improvement.