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Publication
Physical Review B
Paper
Magnetoconductance of pinched silicon accumulation layers
Abstract
The magnetoconductance of ultranarrow Si accumulation layers has been measured using a pinched metal-oxide-semiconductor field-effect transistor. The data have two noteworthy features. First, the electron density inferred from Shubnikov-de Haas oscillations is much smaller than that expected for our device. Also, structure in the magnetoconductance persists down to low gate voltages where the temperature-dependent conductance appears to be in the limit of one-dimensional strong localization. © 1986 The American Physical Society.