About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters Applied Physics Letters
Paper
Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
Abstract
We have successfully demonstrated the use of a novel chemical vapor deposition technique, ultrahigh vacuum/chemical vapor deposition, to deposit homoepitaxial silicon layers of high crystalline perfection at low temperatures (T≥750°C). Rutherford backscattering and transmission electron microscopy showed the transition to epitaxial silicon growth took place in the range 700-750°C, and secondary ion mass spectrometry showed typical oxygen and carbon levels to be near the detection limits of the technique 10 16-1017 cm-3. In addition, abrupt dopant transitions have been demonstrated, with B levels dropping four orders of magnitude, 1019-10 15 B/cm3, in the first 1000 angstroms of an intrinsic epilayer.