Self-aligned bipolar npn transistor with 60 nm epitaxial base
J.N. Burghartz, S. Mader, et al.
IEDM 1989
We have successfully demonstrated the use of a novel chemical vapor deposition technique, ultrahigh vacuum/chemical vapor deposition, to deposit homoepitaxial silicon layers of high crystalline perfection at low temperatures (T≥750°C). Rutherford backscattering and transmission electron microscopy showed the transition to epitaxial silicon growth took place in the range 700-750°C, and secondary ion mass spectrometry showed typical oxygen and carbon levels to be near the detection limits of the technique 10 16-1017 cm-3. In addition, abrupt dopant transitions have been demonstrated, with B levels dropping four orders of magnitude, 1019-10 15 B/cm3, in the first 1000 angstroms of an intrinsic epilayer.
J.N. Burghartz, S. Mader, et al.
IEDM 1989
D.L. Harame, J.M.C. Stork, et al.
VLSI Technology 1990
J.M.C. Stork, G.L. Patton, et al.
VLSI Technology 1989
J.F. Morar, B.S. Meyerson, et al.
Applied Physics Letters