M. Arafa, P. Fay, et al.
Electronics Letters
Silicon surface optimization prior to film growth is central to the fields of chemical vapor deposition and molecular beam epitaxy. We have examined a method for low-temperature in situ cleaning of the Si (100) surfaces utilizing a submonolayer coverage of germanium. Synchrotron excited x-ray photoemission data indicate that Ge atoms arriving at a Si (100) surface can break silicon-oxygen bonds, thereby producing new chemical species which sublimate at 625°C. In the absence of Ge, the observed silicon oxide species were stable at temperatures well in excess of 750°C. These results are used to investigate the mechanisms by which adsorbed Ge can be used to produce oxide-free Si (100) surfaces at 625°C.
M. Arafa, P. Fay, et al.
Electronics Letters
R.M. Feenstra, M.A. Lutz, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
J.M.C. Stork, G.L. Patton, et al.
Bipolar Circuits and Technology Meeting 1989
E. Marotta, N. Bakhru, et al.
Thin Solid Films