T.N. Jackson, S. Nelson, et al.
IEEE Transactions on Electron Devices
Far-infrared measurements of the cyclotron resonance absorption of a two-dimensional electron gas (2DEG) in a strained Si/SiGe heterostructure at low temperature (0.35-4 K) in the magnetic field range 2-14 T are reported. The effective mass was determined to be m*≅0.195±0.004 m 0, and exhibited only a slight decrease (3%) at low carrier densities, in contrast to the large (40%) change observed in Si metal-oxide-semiconductor field effect transistors. In addition, the cyclotron absorption lines tend to be narrow (≲1 cm-1), and show a significant dependence on both field and carrier density that appears to be related to the filling of the quantized Landau and spin levels of the 2DEG.
T.N. Jackson, S. Nelson, et al.
IEEE Transactions on Electron Devices
B. Bucher, Z. Schlesinger, et al.
Physical Review Letters
J.R. Kirtley, R.T. Collins, et al.
Physical Review B
D.B. Mitzi, C. Feild, et al.
Journal of Solid State Chemistry