Tunnel diodes are of interest to gain insights into the limitations of tunnel field effect transistors (TFETs) as they enable us to distinguish effects of the heterojunction from device parasitics found in a three terminal device. In the present work, we report on InAs/GaSb nanowire heterojunction tunnel diodes monolithically integrated on silicon-on-insulator substrate (SOI). The nanowires were grown using template-assisted selective epitaxy (TASE). Temperature dependent I-V measurements show a change in the conductance slope due to the presence of defects at the heterojunction. Comparison with TFETs results shows a similar temperature dependence of the slope, but with smaller absolute values. We further performed room temperature pulsed I-V measurements on the same diodes to analyze trap contributions and we observed no significant dependence on pulse time down to 10μs.