Monolithic integration of multiple III-V semiconductors on Si for MOSFETs and TFETs
- Heinz Schmid
- D. Cutaia
- et al.
- 2016
- IEDM 2016
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13 results for Nicolas Bologna
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
- Mattias Borg
- Heinz Schmid
- et al.
- 2017
- ACS Nano
III-V vertical nanowires grown on Si by template-assisted selective epitaxy for tandem solar cells
- Noelia Vico Triviño
- Philipp Staudinger
- et al.
- 2019
- PVLED 2019
Template-assisted selective epitaxy for III-V vertical nanowires on Si tandem solar cells
- Noelia Vico Triviño
- Philipp Staudinger
- et al.
- 2019
- CSW 2019
Investigation of InAs/GaSb tunnel diodes on SOI
- Clarissa Convertino
- D. Cutaia
- et al.
- 2017
- EUROSOI-ULIS 2017
Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
- D. Cutaia
- Heinz Schmid
- et al.
- 2016
- SNW 2016
Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
- Moritz Knoedler
- Nicolas Bologna
- et al.
- 2017
- Crystal Growth and Design
Manipulating Surface States of III-V Nanowires with Uniaxial Stress
- Giorgio Signorello
- Saurabh Sant
- et al.
- 2017
- Nano Letters
Nanoscale analysis of electrical junctions in InGaP nanowires grown by template-assisted selective epitaxy
- V. Piazza
- Stephan Wirths
- et al.
- 2019
- Applied Physics Letters
Transition to the quantum hall regime in InAs nanowire cross-junctions
- Johannes Gooth
- Mattias Borg
- et al.
- 2019
- Semiconductor Science and Technology