Mathias Steiner, Marcus Freitag, et al.
Applied Physics A: Materials Science and Processing
We examine graphitization of amorphous carbon (a-C) in a-C/Ni bilayer samples having the structure Si/ SiO2 /a-C(3-30 nm)/Ni(100 nm). In situ x-ray diffraction (XRD) measurements during heating in He at 3 °C/s to 1000 °C showed graphitic C formation beginning at temperatures T of 640-730 °C, suggesting graphitization by direct metal-induced crystallization, rather than by a dissolution/precipitation mechanism in which C is dissolved during heating and expelled from solution upon cooling. We also find that graphitic C, once formed, can be reversibly dissolved by heating to T>950 °C, and that nongraphitic C can be volatilized by annealing in H2 -containing ambients. © 2010 American Institute of Physics.
Mathias Steiner, Marcus Freitag, et al.
Applied Physics A: Materials Science and Processing
Marcus Freitag, James C. Tsang, et al.
Nano Letters
Ravi S. Sundaram, Mathias Steiner, et al.
Nano Letters
James C. Tsang, Jeffrey Alan Kash, et al.
Proceedings of the IEEE