A. Gangulee, F.M. D'Heurle
Thin Solid Films
We report a photoreflectance study of the effects of Ar+ sputtering and thermal annealing on the Fermi level (V) on (001) n- and p-type GaAs with large, uniform electric fields. The measurements were performed in situ in an ultrahigh vacuum (UHV) chamber. The effect of the sputtering was to move V from midgap to near the conduction band for both types of material. Subsequent UHV annealing (350°C) and air exposure restored V its original midgap value. The implication of these observations for various models of Schottky barrier formation will be discussed. Our work also demonstrates the need to simultaneously measure both n- and p-type material in order to obtain unambiguous results.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Ellen J. Yoffa, David Adler
Physical Review B
J.K. Gimzewski, T.A. Jung, et al.
Surface Science