R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
The influence of the dimensionality on the performance of tunneling field-effect transistors is investigated with simulations. It is shown that in a three-dimensional tunneling FET it is possible to achieve inverse subthreshold slopes smaller than 60 mV/dec. However, there is a trade-off between high on-currents and small values for the subthreshold swing. Using a carbon nanotube tunneling FET as an example it is shown that in contrast to the 3D case, one-dimensional systems offer the possibility to combine a high on-state performance with steep inverse subthreshold slopes. © 2007 Elsevier Ltd. All rights reserved.
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Mark W. Dowley
Solid State Communications
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989