Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
The influence of the dimensionality on the performance of tunneling field-effect transistors is investigated with simulations. It is shown that in a three-dimensional tunneling FET it is possible to achieve inverse subthreshold slopes smaller than 60 mV/dec. However, there is a trade-off between high on-currents and small values for the subthreshold swing. Using a carbon nanotube tunneling FET as an example it is shown that in contrast to the 3D case, one-dimensional systems offer the possibility to combine a high on-state performance with steep inverse subthreshold slopes. © 2007 Elsevier Ltd. All rights reserved.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications