Hybrid field-effect transistor based on a low-temperature melt-processed channel layer

Abstract

Hybrid field-effect…. Low-melting point hybrid perovskits have enabled the first demonstration of melt-processed field-effect transistors (FET) channel layers with both large saturation- and linear-regime mobilities. The ability to tailor the melting properties of the semiconducting systems using the organic component of the hybrid, enables a reduction of the melting temperature to values low enough for processing on selected plastic substrates with even lower melting temperatures envisioned as wider range of organic cations is explored. With respect to vapor-phase deposition, melt processing represents a lower-energy process and relaxes requirements for molecular mobility and reorganization on the substrate during deposition.