High resolution energy-loss spectroscopy

Abstract

In principle, Electron Energy-Loss Spectroscopy in the Scanning Transmission Electron Microscope can obtain information related to the electronic structure of single defect structures in semiconductors. The instrumental requirements necessary to accomplish this are discussed. Examples include: Si and GaAs interband excitations, graphite EXELFS analysis, and surface and defect induced structure at the SiL2,3 edge. © 1989.