High Performance 0.1 μm CMOS Devices with 1.5 V Power Supply
- Y. Taur
- S.J. Wind
- et al.
- 1993
- IEDM 1993
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20 results for P. Coane
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
Trench storage capacitors for high density DRAMs
- T.V. Rajeevakumar
- T. Lii
- et al.
- 1991
- IEDM 1991
Indium Channel Implant for Improved Short-Channel Behavior of Submicrometer NMOSFET's
- G. Shahidi
- Bijan Davari
- et al.
- 1993
- IEEE Electron Device Letters
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters
The design, fabrication and characterization of 0.15 μm MOS devices
- H.I. Hanafi
- P. Coane
- et al.
- 1993
- ESSDERC 1993
Mixed e-beam/optical lithography process for the fabrication of sub-0.25-μm poly gates
- Keith T. Kwietniak
- Michael G. Rosenfield
- et al.
- 1993
- Microlithography 1993
Fully-scaled 0.25-micron bipolar technology using variable shaped electron-beam lithography
- Philip J. Coane
- Kaolin G. Chiong
- et al.
- 1993
- Microlithography 1993
A room temperature 0.1 μm CMOS on SOI
- G. Shahidi
- C. Blair
- et al.
- 1993
- VLSI Technology 1993
A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993