A Novel Borderless Contact/Interconnect Technology Using Aluminum Oxide Etch Stop for High Performance SRAM and Logic
- S. Subbanna
- D.L. Harame
- et al.
- 1993
- IEDM 1993
Publications
13 results at IEDM 1993
Vertical Profile Optimization of Very High Frequency Epitaxial Si- and SiGe-Base Bipolar Transistors
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEDM 1993
High Performance 0.1 μm CMOS Devices with 1.5 V Power Supply
- Y. Taur
- S.J. Wind
- et al.
- 1993
- IEDM 1993
A DUAL DAMASCENE HARD METAL CAPPED CU AND AL-ALLOY FOR INTERCONNECT WIRING OF ULSI CIRCUITS
- H. Dalai
- R.V. Joshi
- et al.
- 1993
- IEDM 1993
INVESTIGATION OF HOT ELECTRON LUMINESCENCE IN SILICON BY MEANS OF DUAL-GATE MOSFET's
- Luca Selmi
- Hon-Sum Wong
- et al.
- 1993
- IEDM 1993
High transconductance n- and p-channel GaAs MESFETs using novel amphipolar Cu3Ge ohmic contacts
- C.L. Lin
- M.O. Aboelfotoh
- et al.
- 1993
- IEDM 1993
High performance dielectrics and processes for ULSI interconnection technologies
- J. Paraszczak
- D. Edelstein
- et al.
- 1993
- IEDM 1993
SOI for a 1-Volt CMOS Technology and Application to a 512kb SRAM with 3.5 ns Access Time
- G. Shahidi
- T.H. Ning
- et al.
- 1993
- IEDM 1993
Three-Dimensional “Atomistic” Simulation of Discrete Random Dopant Distribution Effects in Sub-0.1μm MOSFET's
- Hon-Sum Wong
- Yuan Taur
- 1993
- IEDM 1993
A 0.6 µm2 256Mb Trench DRAM Cell with Self-Aligned Buried Strap (BEST)
- L.A. Nesbit
- J. Alsmeier
- et al.
- 1993
- IEDM 1993