Growth and dissolution kinetics of ternary III-V heterostructures formed by liquid phase epitaxy. III. Effects of temperature programming

Abstract

The kinetics of growth and dissolution and compositional grading in the solid are computed when a liquid-phase epitaxial system is subjected to temperature programming. We solve the transport equations (including the effect of interface motion) by means of series expansions in powers of t1/2. This requires a careful analysis of the phase relations that hold at the crystal-fluid interface, because these are now explicitly time dependent. The theory is applied to a specific active layer of a (GaAl)As heterostructure laser, but the calculations can be extended to any III-V ternary system, and indeed to any multicomponent system.