GaAs_1-xP_x Electroluminescent Diodes Made by Zn Diffusion in an Open-Tube System

Abstract

An open-tube process has been used for Zn diffusion in GaAs1-xPx coated with SiO2 films to form p-n junctions. Electroluminescent diodes made by this method have a brightness of 600 ft-L at 5 A/cm2 with no etching of the surface required. The effects of temperature, time, and SiO2 thickness on junction depth, efficiency, and brightness of the diodes are described. © 1972, The Electrochemical Society, Inc. All rights reserved.