Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
An open-tube process has been used for Zn diffusion in GaAs1-xPx coated with SiO2 films to form p-n junctions. Electroluminescent diodes made by this method have a brightness of 600 ft-L at 5 A/cm2 with no etching of the surface required. The effects of temperature, time, and SiO2 thickness on junction depth, efficiency, and brightness of the diodes are described. © 1972, The Electrochemical Society, Inc. All rights reserved.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999