Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma

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Etching of high aspect ratio patterns induces reactive ion etching (RIE) lag. This effect is studied for oxide features etched in a high density plasma excited by electron cyclotron resonance using different fluorocarbon gases. A new RIE lag model is proposed which depends on the assumption that the oxide etch rate is, as on a blanket sample, strongly influenced by the deposition of fluorocarbon film on the oxide surface during the etching process. © 1994, American Vacuum Society. All rights reserved.