This paper reports on a feasibility study of using infrared (IR) laser ablation for silicon handler debonding for the first time. Various lasers were evaluated for the transmission through a Si handler and several release layers were studied for on low-power laser ablation. Debonding of silicon handler has been successfully demonstrated. Furthermore, a test vehicle based on through-silicon-via (TSV) wafers was used to evaluate the impact of IR laser ablation on the devices. Promising electrical testing results are obtained and fast debonding at wafer level has been demonstrated.