Wen-Hsing Chang, Bijan Davari, et al.
IEEE T-ED
Very high-transconductance 0.1-um surface-channel opMOSFET devices are fabricated with p+-poly gate on 35-A-thick gate oxide. A 600-A-deep p + source-drain extension is used with self-aligned TiSi2to achieve low series resistance. The saturation transconductances, 400 mS/mm at 300 K and 500 mS/mm at 77 K, are the highest reported to date for pMOSFET devices. © 1993 IEEE
Wen-Hsing Chang, Bijan Davari, et al.
IEEE T-ED
H.-S. Wong, J. Appenzeller, et al.
ISSCC 2003
W. Chen, Y. Taur, et al.
VLSI Technology 1996
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DAC 2002