IMW 2009
Conference paper

Endurance improvement of Ge2Sb2Te5-based phase change memory

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We describe a cycling failure mode in Ge2Sb2Te 5-based Phase Change Memory, based on density difference of GST in different phases and the SET/RESET thermal operations. Voids that develop and merge with each other within GST programming volume after cycling eventually lead to cell failure. By adding suitable amount of doping material into GST, we are able to delay this void formation process and to significantly improve the cell endurance to more than 109 cycles. ©2009 IEEE.