About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Electronic structure of the InP(110) surface: an inverse photoemission study
Abstract
The unoccupied electronic structure of the InP(110) surface has been investigated with k-resolved inverse photoemission spectroscopy. Two surface states were detected, partly dispersing in the projected bandgap, with energy positions that agree rather well with optical spectroscopy data. The measured band dispersions, however, are in poor agreement with existing band calculations for InP(110), whereas some recent self-consistent, quasiparticle calculations for GaAs(110) and GaP(110) present surface state bands with shapes similar to that measured. © 1991.