Publication
Physical Review B
Paper

Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1×1)Bi

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Abstract

We report the structural and electronic properties of a new ordered Bi(1×1) overlayer on cleaved GaAs(110) surfaces. Although some structural similarities exist between the ordered Bi monolayer and that for Sb, our studies show the following novel features: a periodic one-dimensional array of misfit dislocations, which appear to generate acceptor states that pin the Fermi level on n-type GaAs, and Bi-derived valence and conduction bands that extend into the GaAs band gap and are separated by 0.7 eV. © 1989 The American Physical Society.

Date

15 Jun 1989

Publication

Physical Review B

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