Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
We report the structural and electronic properties of a new ordered Bi(1×1) overlayer on cleaved GaAs(110) surfaces. Although some structural similarities exist between the ordered Bi monolayer and that for Sb, our studies show the following novel features: a periodic one-dimensional array of misfit dislocations, which appear to generate acceptor states that pin the Fermi level on n-type GaAs, and Bi-derived valence and conduction bands that extend into the GaAs band gap and are separated by 0.7 eV. © 1989 The American Physical Society.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules