Julien Autebert, Aditya Kashyap, et al.
Langmuir
We report the structural and electronic properties of a new ordered Bi(1×1) overlayer on cleaved GaAs(110) surfaces. Although some structural similarities exist between the ordered Bi monolayer and that for Sb, our studies show the following novel features: a periodic one-dimensional array of misfit dislocations, which appear to generate acceptor states that pin the Fermi level on n-type GaAs, and Bi-derived valence and conduction bands that extend into the GaAs band gap and are separated by 0.7 eV. © 1989 The American Physical Society.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999