Donguk Nam, David Sukhdeo, et al.
ISTDM 2012
We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LEDs) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76 bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76 strained Ge LED shows a 100 nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and finite-difference time domain simulations, we discuss the implications for highly efficient Ge lasers. © 2012 American Institute of Physics.
Donguk Nam, David Sukhdeo, et al.
ISTDM 2012
Donguk Nam, David Sukhdeo, et al.
ISTDM 2012
Donguk Nam, David Sukhdeo, et al.
ISTDM 2012
Amlan Majumdar, Yanning Sun, et al.
IEEE T-ED