D.J. Kim, D.Y. Ryu, et al.
Journal of Applied Physics
High-effective mobilities are demonstrated in Al2O3 based n-channel MOSFETs with Al gates. The Al2O3 was grown in ultra-high vacuum using a reactive atomic beam deposition system. The mobility with maximum values at approximately 270 cm2/Vs, is found to approach that of SiO2 based MOSFETs at higher fields.
D.J. Kim, D.Y. Ryu, et al.
Journal of Applied Physics
E. Cartier, F.R. McFeely, et al.
VLSI Technology 2005
S. Guha, H. Munekata
Journal of Applied Physics
S. Guha, H. Munekata, et al.
Journal of Applied Physics